[2DA1774R]
Type=PNP
Description=50.0V  0.150A  250MHz   Diodes Inc. Bipolar Transistor
IS=1.52e-14
NF=1
BF=523
VAF=127
IKF=0.0547
ISE=3.88e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.135
RE=0.71
RB=2.84
RC=0.284
XTB=1.5
CJE=4.26e-11
VJE=1.1
MJE=0.5
CJC=1.37e-11
VJC=0.3
MJC=0.3
TF=4.53e-10
TR=9.64e-08
EG=1.12
[/]

[2DC4617R]
Type=NPN
Description=50.0V  0.150A  200MHz   Diodes Inc. Bipolar Transistor
IS=1.55e-14
NF=1
BF=524
VAF=127
IKF=0.0547
ISE=3.9e-12
NE=2
BR=4
NR=1
VAR=28
IKR=0.135
RE=0.29
RB=1.16
RC=0.116
XTB=1.5
CJE=2.27e-11
VJE=1.1
MJE=0.5
CJC=7.34e-12
VJC=0.3
MJC=0.3
TF=6.98e-10
TR=1.21e-07
EG=1.12
[/]

[BC807-16]
Type=PNP
Description=45.0V  0.500A  220MHz   Diodes Inc. BJTs
IS=5.07e-14
NF=1
BF=342
VAF=121
IKF=0.273
ISE=2.42e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.213
RB=0.852
RC=0.0852
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.31e-10
TR=1.11e-07
EG=1.12
[/]

[BC807-25]
Type=PNP
Description=45.0V  0.500A  220MHz   Diodes Inc. BJTs
IS=5.07e-14
NF=1
BF=547
VAF=121
IKF=0.273
ISE=1.51e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.213
RB=0.852
RC=0.0852
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.31e-10
TR=1.09e-07
EG=1.12
[/]

[BC807-40]
Type=PNP
Description=45.0V  0.500A  220MHz   Diodes INC. BJTs
IS=5.07e-14
NF=1
BF=821
VAF=121
IKF=0.273
ISE=1.01e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.213
RB=0.852
RC=0.0852
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.31e-10
TR=1.08e-07
EG=1.12
[/]

[BC817-16]
Type=NPN
Description=45.0V  0.800A  220MHz   Diodes INC. BJTs
IS=4.04e-09
NF=1
BF=342
VAF=121
IKF=0.273
ISE=6.86e-09
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.227
RB=0.907
RC=0.0907
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.51e-10
TR=1.11e-07
EG=1.12
[/]

[BC807-16W]
Type=PNP
Description=45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
IS=4.99e-14
NF=1
BF=342
VAF=121
IKF=0.182
ISE=1.96e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=0.663
RB=2.65
RC=0.265
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=8.41e-10
TR=1.12e-07
EG=1.12
[/]

[BC817-25]
Type=NPN
Description=45.0V  0.800A  220MHz   Diodes Inc. BJTs
IS=4.04e-09
NF=1
BF=548
VAF=121
IKF=0.273
ISE=4.29e-09
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.227
RB=0.907
RC=0.0907
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.51e-10
TR=1.09e-07
EG=1.12
[/]

[BC807-25W]
Type=PNP
Description=45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
IS=4.99e-14
NF=1
BF=547
VAF=121
IKF=0.182
ISE=1.23e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=0.663
RB=2.65
RC=0.265
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=8.41e-10
TR=1.1e-07
EG=1.12
[/]

[BC817-40]
Type=NPN
Description=45.0V  0.800A  220MHz   Diodes Inc. BJTs
IS=4.04e-09
NF=1
BF=822
VAF=121
IKF=0.273
ISE=2.86e-09
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.227
RB=0.907
RC=0.0907
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=6.51e-10
TR=1.08e-07
EG=1.12
[/]

[BC807-40W]
Type=PNP
Description=45.0V  0.500A  163MHz   Diodes Inc. PNP BJT
IS=4.99e-14
NF=1
BF=821
VAF=121
IKF=0.182
ISE=8.17e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=0.663
RB=2.65
RC=0.265
XTB=1.5
CJE=1.07e-10
VJE=1.1
MJE=0.5
CJC=3.47e-11
VJC=0.3
MJC=0.3
TF=8.41e-10
TR=1.09e-07
EG=1.12
[/]

[BC846A]
Type=NPN
Description=65.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=305
VAF=145
IKF=0.0536
ISE=5.86e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.135
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.16e-10
TR=5.03e-08
EG=1.12
[/]

[BC846AW]
Type=NPN
Description=65.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=305
VAF=145
IKF=0.0536
ISE=5.86e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.135
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.16e-10
TR=5.03e-08
EG=1.12
[/]

[BC846B]
Type=NPN
Description=65.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=650
VAF=145
IKF=0.0395
ISE=2.93e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.105
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=3.85e-10
TR=4.9e-08
EG=1.12
[/]

[BC846BW]
Type=NPN
Description=65.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=650
VAF=145
IKF=0.0395
ISE=2.93e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.105
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=3.85e-10
TR=4.9e-08
EG=1.12
[/]

[BC847A]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=301
VAF=121
IKF=0.0607
ISE=5.82e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=5.03e-08
EG=1.12
[/]

[BC847AT]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=9.98e-15
NF=1
BF=301
VAF=121
IKF=0.0607
ISE=5.75e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=1.3e-11
VJC=0.3
MJC=0.3
TF=4.23e-10
TR=5.03e-08
EG=1.12
[/]

[BC847AW]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=301
VAF=121
IKF=0.0607
ISE=5.82e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=5.03e-08
EG=1.12
[/]

[BC847B]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes, Inc. transistor
IS=3.75e-15
NF=1
BF=1610
VAF=121
IKF=0.00879
ISE=8.38e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=5.2e-10
TR=7.89e-08
EG=1.12
[/]

[BC847BLP]
Type=NPN
Description=45.0V  0.100A  490MHz   Diodes Inc. BJT
IS=4.81e-13
NF=1
BF=616
VAF=121
IKF=0.0547
ISE=1.85e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.135
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=2.3e-10
TR=4.91e-08
EG=1.12
[/]

[BC847BS]
Type=NPN
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=9.98e-15
NF=1
BF=616
VAF=121
IKF=0.0607
ISE=2.81e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=4.33e-12
VJC=0.3
MJC=0.3
TF=5.85e-10
TR=4.91e-08
EG=1.12
[/]

[BC847BT]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=9.98e-15
NF=1
BF=616
VAF=121
IKF=0.0607
ISE=2.81e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=1.3e-11
VJC=0.3
MJC=0.3
TF=4.23e-10
TR=4.91e-08
EG=1.12
[/]

[BC847BVC]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes, Inc. transistor
IS=3.75e-15
NF=1
BF=1610
VAF=121
IKF=0.00879
ISE=8.38e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=5.2e-10
TR=7.89e-08
EG=1.12
[/]

[BC847BVN_NPN Element]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc. NPN Element of BC847BVN
IS=9.98e-15
NF=1
BF=479
VAF=121
IKF=0.0364
ISE=2.8e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=1.82e-11
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=4.1e-10
TR=8.07e-08
EG=1.12
[/]

[BC847BVN_PNP Element]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. PNP Element of BC847BVN
IS=1.96e-15
NF=1
BF=356
VAF=121
IKF=0.0364
ISE=1.67e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=1.31
RB=5.26
RC=0.526
XTB=1.5
CJE=1.87e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.05e-10
TR=9.77e-08
EG=1.12
[/]

[BC847BW]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=616
VAF=121
IKF=0.0607
ISE=2.84e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.91e-08
EG=1.12
[/]

[BC847C]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.03e-14
NF=1
BF=1090
VAF=121
IKF=0.0607
ISE=1.61e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.965
RB=3.86
RC=0.386
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC847CT]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=9.98e-15
NF=1
BF=1090
VAF=121
IKF=0.0607
ISE=1.58e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=1.3e-11
VJC=0.3
MJC=0.3
TF=4.23e-10
TR=4.86e-08
EG=1.12
[/]

[BC847CW]
Type=NPN
Description=45.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=121
IKF=0.0607
ISE=1.6e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC847PN]
Type=NPN
Description=45.0V  0.100A  250MHz   Diodes Inc BJTs - Complementary
IS=9.98e-15
NF=1
BF=616
VAF=121
IKF=0.0607
ISE=2.81e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.815
RB=3.26
RC=0.326
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=4.33e-12
VJC=0.3
MJC=0.3
TF=5.85e-10
TR=4.91e-08
EG=1.12
[/]

[BC847PN]
IS=1.02e-14
NF=1
BF=650
VAF=121
IKF=0.0425
ISE=2.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.105
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.86e-10
TR=9.59e-08
EG=1.12
[/]

[BC848A]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0607
ISE=1.6e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC848AW]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0607
ISE=1.6e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC848B]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=616
VAF=98.6
IKF=0.0607
ISE=2.84e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.91e-08
EG=1.12
[/]

[BC848BW]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=616
VAF=98.6
IKF=0.0607
ISE=2.84e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.91e-08
EG=1.12
[/]

[BC848C]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0607
ISE=1.6e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC848CW]
Type=NPN
Description=30.0V  0.100A  300MHz   Diodes Inc BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0607
ISE=1.6e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=0.915
RB=3.66
RC=0.366
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=4.27e-10
TR=4.86e-08
EG=1.12
[/]

[BC856A]
Type=PNP
Description=65.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=145
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC856AW]
Type=PNP
Description=65.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=145
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC856B]
Type=PNP
Description=80.0V  0.200A  257MHz   Diodes Inc. Transistor
IS=3.9e-15
NF=1
BF=408
VAF=161
IKF=0.0911
ISE=3.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.225
RE=0.782
RB=3.13
RC=0.313
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=5.48e-10
TR=9.45e-08
EG=1.12
[/]

[BC856BW]
Type=PNP
Description=80.0V  0.200A  257MHz   Diodes Inc. Transistor
IS=3.9e-15
NF=1
BF=408
VAF=161
IKF=0.0911
ISE=3.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.225
RE=0.782
RB=3.13
RC=0.313
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=5.48e-10
TR=9.45e-08
EG=1.12
[/]

[BC857A]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=121
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC857AT]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=121
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=3.76e-11
VJE=1.1
MJE=0.5
CJC=1.21e-11
VJC=0.3
MJC=0.3
TF=4.88e-10
TR=9.78e-08
EG=1.12
[/]

[BC857AW]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=121
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC857B]
Type=PNP
Description=45.0V  0.100A  200MHz   Diodes, Inc. transistor
IS=5.51e-15
NF=1
BF=424
VAF=121
IKF=0.0364
ISE=2.35e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=2.69e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=7e-10
TR=1.21e-07
EG=1.12
[/]

[BC857BLP]
Type=PNP
Description=45.0V  0.100A  490MHz   Diodes Inc. BJT
IS=3.72e-15
NF=1
BF=650
VAF=121
IKF=0.0547
ISE=1.54e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.135
RE=1.06
RB=4.26
RC=0.426
XTB=1.5
CJE=2.68e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=2.21e-10
TR=4.91e-08
EG=1.12
[/]

[BC857BS]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs - Single device of dual
IS=1.02e-14
NF=1
BF=650
VAF=121
IKF=0.0425
ISE=2.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.105
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.86e-10
TR=9.59e-08
EG=1.12
[/]

[BC857BT]
Type=PNP
Description=45.0V  0.100A  200MHz   Diodes, Inc. transistor
IS=5.51e-15
NF=1
BF=424
VAF=121
IKF=0.0364
ISE=2.35e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=2.69e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=7e-10
TR=1.21e-07
EG=1.12
[/]

[BC857BV]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=650
VAF=121
IKF=0.0425
ISE=2.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.105
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=3.76e-11
VJE=1.1
MJE=0.5
CJC=1.21e-11
VJC=0.3
MJC=0.3
TF=4.99e-10
TR=9.59e-08
EG=1.12
TR=9.59e-08
EG=1.12
[/]

[BC857BW]
Type=PNP
Description=45.0V  0.100A  200MHz   Diodes, Inc. transistor
IS=5.51e-15
NF=1
BF=424
VAF=121
IKF=0.0364
ISE=2.35e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=2.69e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=7e-10
TR=1.21e-07
EG=1.12
[/]

[BC857C]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=121
IKF=0.0364
ISE=1.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.87e-10
TR=9.5e-08
EG=1.12
[/]

[BC857CT]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=121
IKF=0.0364
ISE=1.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=3.08e-11
VJE=1.1
MJE=0.5
CJC=1.21e-11
VJC=0.3
MJC=0.3
TF=5.26e-10
TR=9.5e-08
EG=1.12
[/]

[BC857CW]
Type=PNP
Description=45.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=121
IKF=0.0364
ISE=1.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.87e-10
TR=9.5e-08
EG=1.12
[/]

[BC858A]
Type=PNP
Description=30.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=98.6
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC858AW]
Type=PNP
Description=30.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=342
VAF=98.6
IKF=0.0729
ISE=5.59e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.81e-10
TR=9.78e-08
EG=1.12
[/]

[BC858B]
Type=PNP
Description=30.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=650
VAF=98.6
IKF=0.0425
ISE=2.25e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.105
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.86e-10
TR=9.59e-08
EG=1.12
[/]

[BC858BW]
Type=PNP
Description=30.0V  0.100A  200MHz   Diodes, Inc. transistor
IS=5.51e-15
NF=1
BF=424
VAF=98.6
IKF=0.0364
ISE=2.35e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.765
RB=3.06
RC=0.306
XTB=1.5
CJE=2.69e-11
VJE=1.1
MJE=0.5
CJC=8.67e-12
VJC=0.3
MJC=0.3
TF=7e-10
TR=1.21e-07
EG=1.12
[/]

[BC858C]
Type=PNP
Description=30.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0364
ISE=1.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.87e-10
TR=9.5e-08
EG=1.12
[/]

[BC858CW]
Type=PNP
Description=30.0V  0.100A  250MHz   Diodes Inc. BJTs
IS=1.02e-14
NF=1
BF=1090
VAF=98.6
IKF=0.0364
ISE=1.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=0.715
RB=2.86
RC=0.286
XTB=1.5
CJE=1.33e-11
VJE=1.1
MJE=0.5
CJC=7.8e-12
VJC=0.3
MJC=0.3
TF=5.87e-10
TR=9.5e-08
EG=1.12
[/]

[DMMT3904W]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. Matched Transistor
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.657
RB=2.63
RC=0.263
XTB=1.5
CJE=8.29e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=4.26e-10
TR=7.13e-08
EG=1.12
[/]

[DMMT3906]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes Inc. Matched BJTs - Single device of dual
IS=2.03e-14
NF=1
BF=437
VAF=114
IKF=0.0446
ISE=6.81e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.12
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=2.35e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.04e-10
TR=9.43e-08
EG=1.12
[/]

[DMMT3906W]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes, Inc. PNP
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=1.01
RB=4.03
RC=0.403
XTB=1.5
CJE=1.21e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.31e-10
TR=8.56e-08
EG=1.12
[/]

[DMMT5551]
Type=NPN
Description=160V  0.200A  150MHz   Diodes Inc.  Matched BJTs - Single device of dual
IS=1.54e-14
NF=1
BF=342
VAF=228
IKF=0.0425
ISE=5.27e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.105
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=5.2e-11
VJE=1.1
MJE=0.5
CJC=1.68e-11
VJC=0.3
MJC=0.3
TF=8.73e-10
TR=1.63e-07
EG=1.12
[/]

[DN350T05]
Type=NPN
Description=350V  0.500A  50.0MHz   Diodes Inc. NPN BJT
IS=1.77e-13
NF=1
BF=185
VAF=337
IKF=0.182
ISE=6.84e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=1.26
RB=5.05
RC=0.505
XTB=1.5
CJE=6.91e-11
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=3.05e-09
TR=1.16e-07
EG=1.12
[/]

[DNBT8105]
Type=NPN
Description=60.0V  1.00A  150MHz   Diodes Inc. Single NPN BJT
IS=1.67e-13
NF=1
BF=264
VAF=139
IKF=0.364
ISE=6.58e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.9
RE=0.231
RB=0.926
RC=0.0926
XTB=1.5
CJE=1.17e-10
VJE=1.1
MJE=0.5
CJC=1.66e-11
VJC=0.3
MJC=0.3
TF=9.73e-10
TR=1.65e-07
EG=1.12
[/]

[DP350T05]
Type=PNP
Description=350V  0.500A  50.0MHz   Diodes Inc. PNP BJT
IS=1.77e-13
NF=1
BF=185
VAF=337
IKF=0.182
ISE=6.84e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=1.26
RB=5.05
RC=0.505
XTB=1.5
CJE=7.32e-11
VJE=1.1
MJE=0.5
CJC=1.18e-11
VJC=0.3
MJC=0.3
TF=3.04e-09
TR=1.16e-07
EG=1.12
[/]

[DPBT8105]
Type=PNP
Description=80.0V  1.00A  150MHz   Diodes Inc. BJT PNP
IS=1.01e-13
NF=1
BF=410
VAF=161
IKF=0.304
ISE=2.99e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.75
RE=0.281
RB=1.13
RC=0.113
XTB=1.5
CJE=1.17e-10
VJE=1.1
MJE=0.5
CJC=2.84e-11
VJC=0.3
MJC=0.3
TF=9.72e-10
TR=1.62e-07
EG=1.12
[/]

[IMT4]
Type=PNP
Description=120V  50.0mA  200MHz   Diodes Inc. Transistor
IS=1.28e-14
NF=1
BF=513
VAF=197
IKF=0.0304
ISE=2.7e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.075
RE=1.43
RB=5.72
RC=0.572
XTB=1.5
CJE=1.91e-11
VJE=1.1
MJE=0.5
CJC=6.15e-12
VJC=0.3
MJC=0.3
TF=7.1e-10
TR=1.21e-07
EG=1.12
[/]

[IMX8]
Type=NPN
Description=120V  50.0mA  300MHz   Diodes Inc. Transistor
IS=1.46e-14
NF=1
BF=581
VAF=197
IKF=0.0304
ISE=2.54e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.075
RE=0.83
RB=3.32
RC=0.332
XTB=1.5
CJE=1.25e-11
VJE=1.1
MJE=0.5
CJC=4.02e-12
VJC=0.3
MJC=0.3
TF=4.75e-10
TR=8.01e-08
EG=1.12
[/]

[MMBT123S]
Type=NPN
Description=18.0V  1.00A  100MHz   Diodes Inc. BJTs
IS=1.02e-13
NF=1
BF=1090
VAF=76.4
IKF=0.425
ISE=1.34e-11
NE=2
BR=4
NR=1
VAR=20
IKR=1.05
RE=0.181
RB=0.726
RC=0.0726
XTB=1.5
CJE=7.17e-11
VJE=1.1
MJE=0.5
CJC=2.31e-11
VJC=0.3
MJC=0.3
TF=1.55e-09
TR=2.38e-07
EG=1.12
[/]

[MMBT2222A]
Type=NPN
Description=40.0V  0.600A  200MHz   Diodes Inc. Transistor
IS=2.54e-14
NF=1
BF=274
VAF=114
IKF=0.121
ISE=1.43e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.3
RE=0.219
RB=0.877
RC=0.0877
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.42e-11
VJC=0.3
MJC=0.3
TF=6.22e-10
TR=1.24e-07
EG=1.12
[/]

[MMBT2222AT]
Type=NPN
Description=40.0V  0.600A  300MHz   Diodes Inc. BJTs
IS=6.04e-14
NF=1
BF=301
VAF=114
IKF=0.0668
ISE=1.48e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.165
RE=0.261
RB=1.04
RC=0.104
XTB=1.5
CJE=3.62e-11
VJE=1.1
MJE=0.5
CJC=2.31e-11
VJC=0.3
MJC=0.3
TF=4.91e-10
TR=8.21e-08
EG=1.12
[/]

[MMBT2907A]
Type=PNP
Description=60.0V  0.600A  200MHz   Diodes Inc. Transistor
IS=6.07e-14
NF=1
BF=312
VAF=139
IKF=0.219
ISE=2.6e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.54
RE=0.0858
RB=0.343
RC=0.0343
XTB=1.5
CJE=5.04e-11
VJE=1.1
MJE=0.5
CJC=2.31e-11
VJC=0.3
MJC=0.3
TF=7.58e-10
TR=1.23e-07
EG=1.12
[/]

[MMBT2907AT]
Type=PNP
Description=60.0V  0.500A  300MHz   Diodes Inc. BJTs
IS=5e-14
NF=1
BF=410
VAF=139
IKF=0.182
ISE=1.64e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.45
RE=0.343
RB=1.37
RC=0.137
XTB=1.5
CJE=3.49e-11
VJE=1.1
MJE=0.5
CJC=1.47e-11
VJC=0.3
MJC=0.3
TF=4.84e-10
TR=2.99e-08
EG=1.12
[/]

[MMBT3904]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. NPN Transistor
IS=4.83e-14
NF=1
BF=410
VAF=114
IKF=0.121
ISE=1.31e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.3
RE=2.63
RB=10.5
RC=1.05
XTB=1.5
CJE=9.67e-12
VJE=1.1
MJE=0.5
CJC=8.7e-12
VJC=0.3
MJC=0.3
TF=4.4e-10
TR=7.47e-08
EG=1.12
[/]

[MMBT3904T]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. BJTs
IS=2.02e-14
NF=1
BF=410
VAF=114
IKF=0.0304
ISE=4.25e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.075
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=8.92e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=3.83e-10
TR=6.99e-08
EG=1.12
[/]

[MMBT3906]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes Inc. Transistor
IS=2.03e-14
NF=1
BF=192
VAF=114
IKF=0.0607
ISE=1.29e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=7.6e-12
VJE=1.1
MJE=0.5
CJC=6.52e-12
VJC=0.3
MJC=0.3
TF=5.89e-10
TR=9.84e-08
EG=1.12
[/]

[MMBT3906T]
Type=PNP
Description=40.0V  0.200A  257MHz   Didoes Inc. BJTs
IS=7.21e-16
NF=1
BF=410
VAF=114
IKF=0.0607
ISE=1.13e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=1.21
RB=4.83
RC=0.483
XTB=1.5
CJE=1.09e-11
VJE=1.1
MJE=0.5
CJC=6.63e-12
VJC=0.3
MJC=0.3
TF=5.71e-10
TR=8.41e-08
EG=1.12
[/]

[MMBT4124]
Type=NPN
Description=30.0V  0.200A  347MHz   Diodes Inc. NPN Transistor
IS=2.07e-14
NF=1
BF=492
VAF=98.6
IKF=0.0729
ISE=5.54e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=2.63
RB=10.5
RC=1.05
XTB=1.5
CJE=9.65e-12
VJE=1.1
MJE=0.5
CJC=9.47e-12
VJC=0.3
MJC=0.3
TF=4.15e-10
TR=6.98e-08
EG=1.12
[/]

[MMBT4126]
Type=PNP
Description=25.0V  0.200A  257MHz   Diodes Inc. Transistor
IS=2.03e-14
NF=1
BF=598
VAF=90
IKF=0.0729
ISE=4.52e-12
NE=2
BR=4
NR=1
VAR=16
IKR=0.18
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=1.38e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.69e-10
TR=9.34e-08
EG=1.12
[/]

[MMBT4401]
Type=NPN
Description=40.0V  0.600A  200MHz   Diodes, Inc. transistor
IS=6.09e-14
NF=1
BF=410
VAF=114
IKF=0.364
ISE=2.55e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.9
RE=0.713
RB=2.85
RC=0.285
XTB=1.5
CJE=3.62e-11
VJE=1.1
MJE=0.5
CJC=1.54e-11
VJC=0.3
MJC=0.3
TF=7.17e-10
TR=1.21e-07
EG=1.12
[/]

[MMBT4401T]
Type=NPN
Description=40.0V  0.600A  275MHz   Diodes Inc. BJTs
IS=1.27e-12
NF=1
BF=410
VAF=114
IKF=0.0607
ISE=4.77e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.261
RB=1.04
RC=0.104
XTB=1.5
CJE=2.77e-11
VJE=1.1
MJE=0.5
CJC=1.42e-11
VJC=0.3
MJC=0.3
TF=5.33e-10
TR=8.41e-08
EG=1.12
[/]

[MMBT4403]
Type=PNP
Description=40.0V  0.600A  300MHz   Diodes Inc. Transistor
IS=2.69e-14
NF=1
BF=274
VAF=114
IKF=0.304
ISE=2.32e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.75
RE=0.263
RB=1.05
RC=0.105
XTB=1.5
CJE=3.62e-11
VJE=1.1
MJE=0.5
CJC=2.46e-11
VJC=0.3
MJC=0.3
TF=5e-10
TR=8.24e-08
EG=1.12
[/]

[MMBT4403T]
Type=PNP
Description=40.0V  0.600A  200MHz   Diodes Inc. BJTs
IS=6.04e-14
NF=1
BF=410
VAF=114
IKF=0.304
ISE=2.32e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.75
RE=0.261
RB=1.04
RC=0.104
XTB=1.5
CJE=2.77e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=6.67e-10
TR=8.41e-08
EG=1.12
[/]

[MMBT5401]
Type=PNP
Description=150V  0.200A  300MHz   Diodes Inc. Transistor
IS=2.03e-14
NF=1
BF=328
VAF=220
IKF=0.0729
ISE=8.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=5.43e-11
VJE=1.1
MJE=0.5
CJC=1.75e-11
VJC=0.3
MJC=0.3
TF=3.15e-10
TR=8.17e-08
EG=1.12
[/]

[MMBT5551]
Type=NPN
Description=160V  0.200A  130MHz   Diodes Inc. Transistor
IS=2.02e-14
NF=1
BF=219
VAF=228
IKF=0.0364
ISE=8.72e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=2.79e-11
VJE=1.1
MJE=0.5
CJC=8.99e-12
VJC=0.3
MJC=0.3
TF=1.13e-09
TR=1.93e-07
EG=1.12
[/]

[MMBTA05]
Type=NPN
Description=60.0V  0.500A  219MHz   Diodes Inc. BJTs
IS=5.13e-14
NF=1
BF=547
VAF=139
IKF=0.146
ISE=1.11e-11
NE=2
BR=4
NR=1
VAR=16
IKR=0.36
RE=0.223
RB=0.892
RC=0.0892
XTB=1.5
CJE=5.87e-11
VJE=1.1
MJE=0.5
CJC=1.89e-11
VJC=0.3
MJC=0.3
TF=6.31e-10
TR=1.1e-07
EG=1.12
[/]

[MMBTA06]
Type=NPN
Description=80.0V  0.500A  219MHz   Diodes Inc. Transistor
IS=5.08e-14
NF=1
BF=479
VAF=161
IKF=0.0911
ISE=9.99e-12
NE=2
BR=4
NR=1
VAR=16
IKR=0.225
RE=0.103
RB=0.412
RC=0.0412
XTB=1.5
CJE=5.87e-11
VJE=1.1
MJE=0.5
CJC=1.89e-11
VJC=0.3
MJC=0.3
TF=5.76e-10
TR=1.1e-07
EG=1.12
[/]

[MMBTA42]
Type=NPN
Description=300V  0.500A  219MHz   Diodes Inc. NPN Transistor
IS=5.1e-14
NF=1
BF=194
VAF=312
IKF=0.182
ISE=3.49e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.45
RE=11.6
RB=46.3
RC=4.63
XTB=1.5
CJE=5.87e-11
VJE=1.1
MJE=0.5
CJC=1.89e-11
VJC=0.3
MJC=0.3
TF=4.81e-10
TR=1.15e-07
EG=1.12
[/]

[MMBTA55]
Type=PNP
Description=60.0V  0.500A  163MHz   Diodes Inc. Transistor
IS=5.08e-14
NF=1
BF=479
VAF=139
IKF=0.0911
ISE=9.99e-12
NE=2
BR=4
NR=1
VAR=16
IKR=0.225
RE=0.103
RB=0.412
RC=0.0412
XTB=1.5
CJE=1.25e-10
VJE=1.1
MJE=0.5
CJC=4.02e-11
VJC=0.3
MJC=0.3
TF=6.6e-10
TR=1.49e-07
EG=1.12
[/]

[MMBTA56]
Type=PNP
Description=80.0V  0.500A  163MHz   Diodes Inc. Transistor
IS=5.08e-14
NF=1
BF=479
VAF=161
IKF=0.0911
ISE=9.99e-12
NE=2
BR=4
NR=1
VAR=16
IKR=0.225
RE=0.103
RB=0.412
RC=0.0412
XTB=1.5
CJE=1.25e-10
VJE=1.1
MJE=0.5
CJC=4.02e-11
VJC=0.3
MJC=0.3
TF=6.6e-10
TR=1.49e-07
EG=1.12
[/]

[MMBTA92]
Type=PNP
Description=300V  0.500A  60.0MHz   Diodes Inc. Transistor
IS=1.77e-13
NF=1
BF=239
VAF=312
IKF=0.0729
ISE=3.34e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=1.25e-10
VJE=1.1
MJE=0.5
CJC=4.02e-11
VJC=0.3
MJC=0.3
TF=2.18e-09
TR=4.15e-07
EG=1.12
[/]

[MMBTH10]
Type=NPN
Description=25.0V  50.0mA  1.00kMHz   Diodes Inc. Transistor
IS=1.26e-16
NF=1
BF=95.8
VAF=90
IKF=0.0243
ISE=1.28e-12
NE=2
BR=4
NR=1
VAR=12
IKR=0.06
RE=1.51
RB=6.05
RC=0.605
XTB=1.5
CJE=6.27e-12
VJE=1.1
MJE=0.5
CJC=2.02e-12
VJC=0.3
MJC=0.3
TF=1.3e-10
TR=2.74e-08
EG=1.12
[/]

[MMBTH24]
Type=NPN
Description=40.0V  50.0mA  1.00kMHz   Diodes Inc. Transistor
IS=1.26e-16
NF=1
BF=95.8
VAF=114
IKF=0.0243
ISE=1.28e-12
NE=2
BR=4
NR=1
VAR=16
IKR=0.06
RE=1.51
RB=6.05
RC=0.605
XTB=1.5
CJE=6.27e-12
VJE=1.1
MJE=0.5
CJC=2.02e-12
VJC=0.3
MJC=0.3
TF=1.3e-10
TR=2.74e-08
EG=1.12
[/]

[MMDT2222A]
Type=NPN
Description=40.0V  0.600A  300MHz   Diodes Inc. BJTs - Single device of dual
IS=6.1e-14
NF=1
BF=410
VAF=114
IKF=0.121
ISE=1.48e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.3
RE=0.269
RB=1.08
RC=0.108
XTB=1.5
CJE=2.77e-11
VJE=1.1
MJE=0.5
CJC=1.53e-11
VJC=0.3
MJC=0.3
TF=4.96e-10
TR=8.11e-08
EG=1.12
[/]

[MMDT2222V]
Type=NPN
Description=40.0V  0.600A  200MHz   Diodes Inc. Single element of dual BJTs
IS=6.94e-14
NF=1
BF=357
VAF=114
IKF=0.219
ISE=2.42e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.54
RE=0.963
RB=3.85
RC=0.385
XTB=1.5
CJE=6.89e-11
VJE=1.1
MJE=0.5
CJC=2.22e-11
VJC=0.3
MJC=0.3
TF=7.21e-10
TR=1.22e-07
EG=1.12
[/]

[MMDT2227]
Type=NPN
Description=40.0V  0.600A  300MHz   Diodes Inc. BJTs - Complementary
IS=6.1e-14
NF=1
BF=410
VAF=114
IKF=0.121
ISE=1.48e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.3
RE=0.269
RB=1.08
RC=0.108
XTB=1.5
CJE=2.77e-11
VJE=1.1
MJE=0.5
CJC=1.53e-11
VJC=0.3
MJC=0.3
TF=4.96e-10
TR=8.11e-08
EG=1.12
[/]

[MMDT2227]
IS=6.12e-14
NF=1
BF=410
VAF=139
IKF=0.279
ISE=2.24e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.69
RE=0.361
RB=1.44
RC=0.144
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=4.91e-10
TR=8.11e-08
EG=1.12
[/]

[MMDT2907A]
Type=PNP
Description=60.0V  0.600A  300MHz   Diodes Inc. BJTs - Single device of  dual
IS=6.12e-14
NF=1
BF=410
VAF=139
IKF=0.279
ISE=2.24e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.69
RE=0.361
RB=1.44
RC=0.144
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=4.91e-10
TR=8.11e-08
EG=1.12
[/]

[MMDT2907V]
Type=PNP
Description=60.0V  0.600A  148MHz   Diodes Inc. Single element of dual BJTs
IS=5.98e-14
NF=1
BF=312
VAF=139
IKF=0.219
ISE=2.58e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.54
RE=1.56
RB=6.25
RC=0.625
XTB=1.5
CJE=1.48e-10
VJE=1.1
MJE=0.5
CJC=4.78e-11
VJC=0.3
MJC=0.3
TF=9.12e-10
TR=1.66e-07
EG=1.12
[/]

[MMDT3904]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. BJTs - Single device of dual
IS=5.81e-16
NF=1
BF=410
VAF=114
IKF=0.304
ISE=2.28e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.75
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=9.67e-12
VJE=1.1
MJE=0.5
CJC=6.86e-12
VJC=0.3
MJC=0.3
TF=4.5e-10
TR=7.02e-08
EG=1.12
[/]

[MMDT3904V]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. NPN Transistor
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.657
RB=2.63
RC=0.263
XTB=1.5
CJE=8.29e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=4.26e-10
TR=7.13e-08
EG=1.12
[/]

[MMDT3904VC]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. NPN Transistor
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.657
RB=2.63
RC=0.263
XTB=1.5
CJE=8.29e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=4.26e-10
TR=7.13e-08
EG=1.12
[/]

[MMDT3906]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes Inc. BJTs - Single device of dual
IS=7.21e-16
NF=1
BF=410
VAF=114
IKF=0.0486
ISE=1.01e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.12
RE=1.21
RB=4.83
RC=0.483
XTB=1.5
CJE=1.09e-11
VJE=1.1
MJE=0.5
CJC=7.57e-12
VJC=0.3
MJC=0.3
TF=5.58e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT3906V]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes, Inc. PNP
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=1.01
RB=4.03
RC=0.403
XTB=1.5
CJE=1.21e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.31e-10
TR=8.56e-08
EG=1.12
[/]

[MMDT3906VC]
Type=PNP
Description=40.0V  0.200A  257MHz   Diodes, Inc. PNP
IS=2.03e-14
NF=1
BF=274
VAF=114
IKF=0.0364
ISE=6.99e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.09
RE=1.01
RB=4.03
RC=0.403
XTB=1.5
CJE=1.21e-11
VJE=1.1
MJE=0.5
CJC=1.07e-11
VJC=0.3
MJC=0.3
TF=5.31e-10
TR=8.56e-08
EG=1.12
[/]

[MMDT3946]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. BJTs - Complementary
IS=5.81e-16
NF=1
BF=410
VAF=114
IKF=0.304
ISE=2.28e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.75
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=9.67e-12
VJE=1.1
MJE=0.5
CJC=6.86e-12
VJC=0.3
MJC=0.3
TF=4.5e-10
TR=7.02e-08
EG=1.12
[/]

[MMDT3946]
IS=7.21e-16
NF=1
BF=410
VAF=114
IKF=0.0486
ISE=1.01e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.12
RE=1.21
RB=4.83
RC=0.483
XTB=1.5
CJE=1.09e-11
VJE=1.1
MJE=0.5
CJC=7.57e-12
VJC=0.3
MJC=0.3
TF=5.58e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT4124]
Type=NPN
Description=25.0V  0.200A  347MHz   Diodes Inc. BTJs - Single device of dual
IS=5.81e-16
NF=1
BF=492
VAF=90
IKF=0.0304
ISE=6e-13
NE=2
BR=4
NR=1
VAR=20
IKR=0.075
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=7.96e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=3.86e-10
TR=6.98e-08
EG=1.12
[/]

[MMDT4126]
Type=PNP
Description=25.0V  0.200A  257MHz   Diodes Inc. BTJs - Single device of dual
IS=7.06e-16
NF=1
BF=492
VAF=90
IKF=0.0607
ISE=9.35e-13
NE=2
BR=4
NR=1
VAR=16
IKR=0.15
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=7.24e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=5.85e-10
TR=9.4e-08
EG=1.12
[/]

[MMDT4401]
Type=NPN
Description=40.0V  0.600A  275MHz   Diodes Inc. BJTs - Single device of dual
IS=6.07e-14
NF=1
BF=410
VAF=114
IKF=0.219
ISE=1.97e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.54
RE=0.0858
RB=0.343
RC=0.0343
XTB=1.5
CJE=3.62e-11
VJE=1.1
MJE=0.5
CJC=1.54e-11
VJC=0.3
MJC=0.3
TF=5.39e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT4403]
Type=PNP
Description=40.0V  0.600A  275MHz   Diodes Inc. BJTs - Single device of dual
IS=6.1e-14
NF=1
BF=410
VAF=114
IKF=0.34
ISE=2.47e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.84
RE=0.269
RB=1.08
RC=0.108
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=5.16e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT4413]
Type=NPN
Description=40.0V  0.600A  275MHz   Diodes Inc. BJTs - Complementaryl
IS=6.07e-14
NF=1
BF=410
VAF=114
IKF=0.219
ISE=1.97e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.54
RE=0.0858
RB=0.343
RC=0.0343
XTB=1.5
CJE=3.62e-11
VJE=1.1
MJE=0.5
CJC=1.54e-11
VJC=0.3
MJC=0.3
TF=5.39e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT4413]
IS=6.1e-14
NF=1
BF=410
VAF=114
IKF=0.34
ISE=2.47e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.84
RE=0.269
RB=1.08
RC=0.108
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=5.16e-10
TR=8.41e-08
EG=1.12
[/]

[MMDT5401]
Type=PNP
Description=150V  0.200A  257MHz   Diodes Inc. BJTs - Single device of dual
IS=6.83e-15
NF=1
BF=328
VAF=220
IKF=0.0729
ISE=4.78e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.157
RB=0.63
RC=0.063
XTB=1.5
CJE=5.2e-11
VJE=1.1
MJE=0.5
CJC=1.68e-11
VJC=0.3
MJC=0.3
TF=4.5e-10
TR=9.54e-08
EG=1.12
[/]

[MMBT5451]
Type=NPN
Description=160V  0.200A  150MHz   Diodes Inc. BJTs - Complementary
IS=2.02e-14
NF=1
BF=219
VAF=228
IKF=0.0364
ISE=8.72e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=2.79e-11
VJE=1.1
MJE=0.5
CJC=8.99e-12
VJC=0.3
MJC=0.3
TF=1.13e-09
TR=1.93e-07
EG=1.12
[/]

[MMBT5451]
IS=2.03e-14
NF=1
BF=328
VAF=220
IKF=0.0729
ISE=8.24e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=5.43e-11
VJE=1.1
MJE=0.5
CJC=1.75e-11
VJC=0.3
MJC=0.3
TF=3.15e-10
TR=8.17e-08
EG=1.12
[/]

[MMDT5551]
Type=NPN
Description=160V  0.200A  130MHz   Diodes Inc. Transistor - single device of dual
IS=2.02e-14
NF=1
BF=219
VAF=228
IKF=0.0364
ISE=8.72e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=2.79e-11
VJE=1.1
MJE=0.5
CJC=8.99e-12
VJC=0.3
MJC=0.3
TF=1.13e-09
TR=1.93e-07
EG=1.12
[/]

[MMST2222A]
Type=NPN
Description=40.0V  0.600A  300MHz   Diodes Inc. BJTs
IS=6.1e-14
NF=1
BF=410
VAF=114
IKF=0.121
ISE=1.48e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.3
RE=0.269
RB=1.08
RC=0.108
XTB=1.5
CJE=2.76e-11
VJE=1.1
MJE=0.5
CJC=1.5e-11
VJC=0.3
MJC=0.3
TF=4.96e-10
TR=8.41e-08
EG=1.12
[/]

[MMST2907A]
Type=PNP
Description=60.0V  0.600A  275MHz   Diodes Inc. BJTs
IS=5.99e-14
NF=1
BF=410
VAF=139
IKF=0.273
ISE=2.19e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.675
RE=0.344
RB=1.38
RC=0.138
XTB=1.5
CJE=3.02e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=5.13e-10
TR=2.99e-08
EG=1.12
[/]

[MMST3904]
Type=NPN
Description=40.0V  0.200A  347MHz   Diodes Inc. BJTs
IS=3.95e-16
NF=1
BF=410
VAF=114
IKF=0.0304
ISE=5.93e-13
NE=2
BR=4
NR=1
VAR=24
IKR=0.075
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=9.95e-12
VJE=1.1
MJE=0.5
CJC=8.99e-12
VJC=0.3
MJC=0.3
TF=3.67e-10
TR=7.02e-08
EG=1.12
[/]

[MMST3906]
Type=PNP
Description=40.0V  0.200A  347MHz   Diodes Inc. BJTs
IS=7.06e-16
NF=1
BF=410
VAF=114
IKF=0.0607
ISE=1.12e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.15
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=7.84e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=4.22e-10
TR=8.41e-08
EG=1.12
[/]

[MMST4124]
Type=NPN
Description=25.0V  0.200A  347MHz   Diodes Inc. BJTs
IS=5.81e-16
NF=1
BF=492
VAF=90
IKF=0.0304
ISE=6e-13
NE=2
BR=4
NR=1
VAR=20
IKR=0.075
RE=0.707
RB=2.83
RC=0.283
XTB=1.5
CJE=7.84e-12
VJE=1.1
MJE=0.5
CJC=7.1e-12
VJC=0.3
MJC=0.3
TF=3.87e-10
TR=6.98e-08
EG=1.12
[/]

[MMST4126]
Type=PNP
Description=25.0V  0.200A  257MHz   Diodes Inc. BJTs
IS=7.06e-16
NF=1
BF=492
VAF=90
IKF=0.0486
ISE=8.36e-13
NE=2
BR=4
NR=1
VAR=16
IKR=0.12
RE=1.16
RB=4.63
RC=0.463
XTB=1.5
CJE=7.24e-12
VJE=1.1
MJE=0.5
CJC=6.86e-12
VJC=0.3
MJC=0.3
TF=5.76e-10
TR=9.4e-08
EG=1.12
[/]

[MMST4401]
Type=NPN
Description=40.0V  0.600A  275MHz   Diodes Inc. BJTs
IS=1.27e-12
NF=1
BF=410
VAF=114
IKF=0.0607
ISE=4.77e-11
NE=2
BR=4
NR=1
VAR=24
IKR=0.15
RE=0.261
RB=1.04
RC=0.104
XTB=1.5
CJE=2.77e-11
VJE=1.1
MJE=0.5
CJC=1.42e-11
VJC=0.3
MJC=0.3
TF=5.33e-10
TR=8.41e-08
EG=1.12
[/]

[MMST4403]
Type=PNP
Description=40.0V  0.600A  300MHz   Diodes Inc. BJTs
IS=6.04e-14
NF=1
BF=410
VAF=114
IKF=0.334
ISE=2.43e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.825
RE=0.261
RB=1.04
RC=0.104
XTB=1.5
CJE=3.14e-11
VJE=1.1
MJE=0.5
CJC=1.85e-11
VJC=0.3
MJC=0.3
TF=4.86e-10
TR=8.11e-08
EG=1.12
[/]

[MMST5401]
Type=PNP
Description=150V  0.200A  257MHz   Diodes Inc. BJTs - Single device of dual
IS=6.83e-15
NF=1
BF=328
VAF=220
IKF=0.0729
ISE=4.78e-12
NE=2
BR=4
NR=1
VAR=20
IKR=0.18
RE=0.157
RB=0.63
RC=0.063
XTB=1.5
CJE=5.2e-11
VJE=1.1
MJE=0.5
CJC=1.68e-11
VJC=0.3
MJC=0.3
TF=4.5e-10
TR=9.54e-08
EG=1.12
[/]

[MMST5551]
Type=NPN
Description=160V  0.200A  130MHz   Diodes Inc. Transistor
IS=2.02e-14
NF=1
BF=219
VAF=228
IKF=0.0364
ISE=8.72e-12
NE=2
BR=4
NR=1
VAR=24
IKR=0.09
RE=0.257
RB=1.03
RC=0.103
XTB=1.5
CJE=2.79e-11
VJE=1.1
MJE=0.5
CJC=8.99e-12
VJC=0.3
MJC=0.3
TF=1.13e-09
TR=1.93e-07
EG=1.12
[/]

[MMSTA05]
Type=NPN
Description=60.0V  0.500A  219MHz   Diodes Inc. BJTs
IS=9.42e-14
NF=1
BF=331
VAF=139
IKF=0.146
ISE=2.49e-11
NE=2
BR=4
NR=1
VAR=16
IKR=0.36
RE=0.215
RB=0.86
RC=0.086
XTB=1.5
CJE=5.87e-11
VJE=1.1
MJE=0.5
CJC=1.89e-11
VJC=0.3
MJC=0.3
TF=6.33e-10
TR=1.12e-07
EG=1.12
[/]

[MMSTA06]
Type=NPN
Description=80.0V  0.500A  219MHz   Diodes Inc. BJTs
IS=9.42e-14
NF=1
BF=301
VAF=161
IKF=0.146
ISE=2.74e-11
NE=2
BR=4
NR=1
VAR=16
IKR=0.36
RE=0.215
RB=0.86
RC=0.086
XTB=1.5
CJE=5.87e-11
VJE=1.1
MJE=0.5
CJC=1.89e-11
VJC=0.3
MJC=0.3
TF=6.33e-10
TR=1.12e-07
EG=1.12
[/]

[MMSTA42]
Type=NPN
Description=300V  0.200A  347MHz   Diodes Inc. BJTs
IS=1.09e-13
NF=1
BF=219
VAF=312
IKF=0.425
ISE=6.93e-11
NE=2
BR=4
NR=1
VAR=24
IKR=1.05
RE=1.21
RB=4.86
RC=0.486
XTB=1.5
CJE=3.29e-11
VJE=1.1
MJE=0.5
CJC=1.06e-11
VJC=0.3
MJC=0.3
TF=4.41e-10
TR=7.25e-08
EG=1.12
[/]

[MMSTA55]
Type=PNP
Description=60.0V  0.500A  70.0MHz   Diodes Inc. BJTs
IS=5.02e-14
NF=1
BF=331
VAF=139
IKF=0.182
ISE=2.03e-11
NE=2
BR=4
NR=1
VAR=16
IKR=0.45
RE=0.133
RB=0.532
RC=0.0532
XTB=1.5
CJE=1.25e-10
VJE=1.1
MJE=0.5
CJC=4.02e-11
VJC=0.3
MJC=0.3
TF=2.16e-09
TR=3.5e-07
EG=1.12
[/]

[MMSTA56]
Type=PNP
Description=80.0V  0.500A  70.0MHz   Diodes Inc. BJTs
IS=5.02e-14
NF=1
BF=331
VAF=161
IKF=0.182
ISE=2.03e-11
NE=2
BR=4
NR=1
VAR=16
IKR=0.45
RE=0.133
RB=0.532
RC=0.0532
XTB=1.5
CJE=1.25e-10
VJE=1.1
MJE=0.5
CJC=4.02e-11
VJC=0.3
MJC=0.3
TF=2.16e-09
TR=3.5e-07
EG=1.12
[/]

[MMSTA92]
Type=PNP
Description=300V  0.100A  60.0MHz   Diodes Inc.  BJTs
IS=5.37e-14
NF=1
BF=164
VAF=312
IKF=0.0668
ISE=2.57e-11
NE=2
BR=4
NR=1
VAR=20
IKR=0.165
RE=0.565
RB=2.26
RC=0.226
XTB=1.5
CJE=5.2e-11
VJE=1.1
MJE=0.5
CJC=1.68e-11
VJC=0.3
MJC=0.3
TF=2.46e-09
TR=4.26e-07
EG=1.12
[/]

